july 2012 fdd4n60nz n-channel mosfet ?2012 fairchild semiconductor corporation fdd4n60nz rev.c0 www.fairchildsemi.com 1 unifet-ii tm mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter fdd4n60nz units v dss drain to source voltage 600 v v gss gate to source voltage 25 v i d drain current -continuous (t c = 25 o c) 3.4 a -continuous (t c = 100 o c) 2 i dm drain current - pulsed (note 1) 13.6 a e as single pulsed avalanche energy (note 2) 17 9.2 mj i ar avalanche current (note 1) 3.4 a e ar repetitive avalanche energy (note 1) 11.4 mj dv/dt peak diode recovery dv/dt (not e 3) 5 v/ns p d power dissipation (t c = 25 o c) 114 w - derate above 25 o c 0.9 w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds 300 o c symbol parameter fdd4n60nz units r jc thermal resistance, junction to case 1.1 o c/w r ja thermal resistance, junction to ambient 110 fdd4n60nz n-channel mosfet 600v, 3.4a, 2.5 features ? r ds(on) = 1.9 ( typ.)@ v gs = 10v, i d = 1.7a ? low gate charge ( typ. 8.3nc) ? low c rss ( typ. 3.7pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? esd improved capability ? rohs compliant description these n-channel enhancement mode power field effect tr an- sistors are produced using fairchilds proprietary, pl anar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching per- formance, and withstand high energy pulse in the avalanch e and commutation mode. these devices are well suited for h igh effi- cient switching mode power supplies and active power fa ctor correction. g s d g s d g s d d-pak
fdd4n60nz n-channel mosfet fdd4n60nz rev.c0 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics device marking device package reel size tape width quant ity fdd4n60nz fdd4n60nz d-pak 380mm 16mm 2500 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t j = 25 o c 600 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.6 - v/ o c i dss zero gate voltage drain current v ds = 600v, v gs = 0v - - 50 a v ds = 480v, t c = 125 o c - - 100 i gss gate to body leakage current v gs = 25v, v ds = 0v - - 10 a v gs(th) gate threshold voltage v gs = v ds , i d = 250 a 3.0 - 5.0 v r ds(on) static drain to source on resistance v gs = 10v, i d = 1.7a - 1.9 2.5 g fs forward transconductance v ds = 20v, i d = 1.7a (note 4) - 3.4 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 385 510 pf c oss output capacitance - 40 60 pf c rss reverse transfer capacitance - 3.7 5 pf q g(tot) total gate charge at 10v v ds = 480v i d = 3.4a v gs = 10v (note 4, 5) - 8.3 10.8 nc q gs gate to source gate charge - 2.1 - nc q gd gate to drain miller charge - 3.3 - nc t d(on) turn-on delay time v dd = 300v, i d = 3.4a v gs = 10v, r g = 25 (note 4, 5) - 12.7 35.4 ns t r turn-on rise time - 15.1 40.2 ns t d(off) turn-off delay time - 30.2 70.4 ns t f turn-off fall time - 12.8 35.6 ns i s maximum continuous drain to source diode forward curr ent - - 3.4 a i sm maximum pulsed drain to source diode forward current - - 13.6 a v sd drain to source diode forward voltage v gs = 0v, i sd = 3.4a - - 1.4 v t rr reverse recovery time v gs = 0v, i sd = 3.4a di f /dt = 100a/ s (note 4) - 168 - ns q rr reverse recovery charge - 0.7 - c notes: 1. repetitive rating: pulse width limited by maximum ju nction temperature 2. l = 31mh, i as = 3.4a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 3.4a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, dual cycle 2% 5. essentially independent of operating temperature typ ical characteristics
fdd4n60nz n-channel mosfet fdd4n60nz rev.c0 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transf er characteristics figure 3. on-resistance variation vs. figure 4. bod y diode forward voltage drain current and gate voltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 2 4 6 8 0.1 1 10 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0.1 1 10 30 0.02 0.1 1 10 20 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 10.0v 8.0v 7.0v 6.5v 6.0v 5.5v 0.0 1.5 3.0 4.5 6.0 7.5 9.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ] , drain-source on-resistance i d , drain current [a] 0.0 0.4 0.8 1.2 1.6 0.1 1 10 40 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 30 1 10 100 1000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0.0 1.5 3.0 4.5 6.0 7.5 9.0 0 2 4 6 8 10 *note: i d = 3.4a v ds = 120v v ds = 300v v ds = 480v v gs , gate-source voltage [v] q g , total gate charge [nc]
fdd4n60nz n-channel mosfet fdd4n60nz rev.c0 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature fig ure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 1.7a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 25 50 75 100 125 150 0 1 2 3 4 r jc = 1.1 o c/w i d , drain current [a] t c , case temperature [ o c ] v gs = 10v 1 10 100 1000 0.01 0.1 1 10 30 30 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.01 0.1 1 2 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 1.1 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
fdd4n60nz n-channel mosfet fdd4n60nz rev.c0 www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & wavef orms
fdd4n60nz n-channel mosfet fdd4n60nz rev.c0 www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ? i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ? i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
fdd4n60nz n-channel mosfet fdd4n60nz rev.c0 www.fairchildsemi.com 7 mechanical dimensions d-pak dimensions in millimeters
fdd4n60nz n-channel mosfet fdd4n60nz rev.c0 www.fairchildsemi.com 8 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild se miconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trade marks. *trademarks of system general corporation, used un der license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products here in to improve reliability, function, or design. fairchild does no t assume any liability arising out of the applicati on or use of any product or circuit described herein; neither does i t convey any license under its patent rights, nor t he rights of others. these specifications do not expand the terms of fai rchilds worldwide terms and conditions, specifical ly the warranty therein, which covers these products. life support policy fairchilds products are not authorized for use as critical components in life support devices or syst ems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or s ystems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the u ser. 2. a critical component in any component of a life s upport, device, or system whose failure to perform can be reasonably e xpected to cause the failure of the life support device or system, o r to affect its safety or effectiveness. product status definitions definition of terms 2cool? accupower? auto-spm? ax-cap?* bitsic ? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motion-spm? mwsaver? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* the power franchise ? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? tm ? ? tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for pr oduct development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference infor mation only. anti-counterfeiting policy fairchild semiconductor corporations anti-counterf eiting policy. fairchilds anti-counterfeiting poli cy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semico nductor products are experiencing counterfeiting of their parts. customers who inadvertently purchase counter feit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and m anufacturing delays. fairchild is taking strong mea sures to protect ourselves and our customers from t he proliferation of counterfeit parts. fairchild stron gly encourages customers to purchase fairchild part s either directly from fairchild or from authorized fairchild distributors who are listed by country on our web p age cited above. products customers buy either from fairchild directly or from authorized fairchild distributors are genuine parts, have full traceabil ity, meet fairchilds quality standards for handing and storage and provide access to fairchilds full range of up-to-date technical and product information. fairc hild and our authorized distributors will stand beh ind all warranties and will appropriately address a nd warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance f or parts bought from unauthorized sources. fairchil d is committed to combat this global problem and encoura ge our customers to do their part in stopping this practice by buying direct or from authorized distri butors. rev. i60 ?
|
